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RF Devices, Circuits and Materials

Strand leader: Dr Ian Harrison

The current activities of the RF Devices, Circuits and Materials research strand include:

  • the design of RF circuits using SiGe HBTs

  • the study of extremely high frequency devices

  • the investigation into the interaction of optical and high frequency signals using femtosecond lasers and four wave mixing

  • the development and characterisation of GaN and related materials for extremely high speed devices and circuits

  • the dielectric characterisation of novel ceramic materials

DC testing of ohmic contacts to p-type cubic GaN Experimental setup in the RF lab

The following links provide further details of our expertise in this area:


Funded Research Projects: