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RF Devices, Circuits and Materials
Strand leader:
Dr Ian Harrison
The current activities of the RF Devices, Circuits and Materials research strand include:
the design of RF circuits using SiGe HBTs
the study of extremely high frequency devices
the investigation into the interaction of optical and high frequency signals using femtosecond lasers and four wave mixing
the development and characterisation of GaN and related materials for extremely high speed devices and circuits
the dielectric characterisation of novel ceramic materials
The following links provide further details of our expertise in this area:
Funded Research Projects:
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